Dr. Ariel Ismach

Material Science and Engineering
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Dr. Ariel Ismach
External phone: 03-6405079

General Infornation

Academic Rank: Senior Lecturer

Ph.D. Chemistry–Department of Materials and Interfaces, Weizmann Institute, 2008.

M.Sc. Chemistry–Department of Materials and Interfaces, Weizmann Institute, 2003.

B.Sc. Materials Engineering – Ben Gurion University, 2001.


Research Interests

  • Synthesis, Characterization and Applications of  Layered Materials (Graphene, Boron Nitride, Molybdenum Disulfide)


Nanomaterials Lab

We are interested in studying the growth of different nanomaterials, mainly 2D atomic-films (like graphene, transition metal dichalcogenides, hexagonal boron nitride, etc.), and to explore their structure-property correlations.


Layered materials offer a wide variety of properties, from superconductors (NbSe2-at low T), metals or semi-metals (graphene, NbSe2, NbTe2, NbS2, VO2, etc.), semiconductors (MoS2, MoSe2, WS2, WSe2, etc.) and insulators (h-BN). Many exciting physical and chemical phenomena in these special materials depend on the number of layers, stacking order, composition and edge-structure and there is a strong scientific and technological interest in the understanding such dependence.


Our research focuses in the developing of new synthetic methodologies for the controlled formation of 2D layered materials at the single-layer level, explore their structure (phase, stacking order, composition, etc.) – properties correlation and to show their integration into functional devices (electrical, optoelectrical, sensors, etc.).




  1. S. Z. Butler, S.M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutiérrez, T. F. Heinz, S. S. Hong, J. Huang, A. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger. Progress, challenges, and opportunities in two-dimensional materials beyond Graphene. ACS Nano, 2013, 7 (4), 2898–2926.
  2. A. Ismach, H. Chou, D. Ferrer, Y. Wu, H.C. Floresca, S. McDonnell, A. Covacevich, C. Pope, R. Piner, R. Wallace, M. Kim, L. Colombo, R. Ruoff. Towards the controlled synthesis of hexagonal Boron Nitride films. ACS Nano, 2012, 6 (7), 6378–6385.
  3. X. Liang, Y. Jung, S. Wu, A. Ismach, D.L. Olynick, S. Cabrini, and J. Bokor. Formation of bandgap and subbands in Graphene nanomeshes with Sub-10 nm ribbon width fabricated via nanoimprint lithography. Nano Letters 2010, 10, 2454–2460.
  4. A. Ismach, C. Druzgalski, S. Penwell, M. Zheng, A. Javey, J. Bokor, Y. Zhang. Direct chemical vapor deposition of Graphene on dielectric surfaces. Nano Letters 2010, 10, 1542-1548.
  5. L.G Cancado, A. Jorio, A. Ismach, E. Joselevich, A. Hartschuh, L. Novotny. Mechanism of near-field Raman enhancement in one-dimensional systems. Physical Review Letters 2009, 106, 186101-186104.
  6. N. Geblinger*, A. Ismach* and E. Joselevich. Self-organized nanotube serpentines. Nature Nanotechnology 2008, 3, 195-200.
  7. R. Gabai, A. Ismach and E. Joselevich. Nanofacet lithography: a new bottom-up approach to nanopatterning and nanofabrication by soft replication of spontaneously faceted crystal surfaces. Advanced Materials 2006, 19, 1325-1330.
  8. A. Ismach and E. Joselevich. Orthogonal self-assembly of carbon nanotube crossbar architectures by simultaneous graphoepitaxy and electric field-directed growth. Nano Letters 2006, 6, 1706-1710.
  9. A. Ismach, D. Kantorovich and E. Joselevich. Carbon nanotube graphoepitaxy: highly oriented growth by faceted nanosteps. Journal of the American Chemical Society 2005, 127, 11554-11555.
  10. A. Ismach, L. Segev, E. Wachtel and E. Joselevich. Atomic step-templated assembly of single-wall Carbon nanotube patterns. Angewandte Chemie International Edition, 2004, 43, 6140-6143.
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